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Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Gehäusetyp	Sperrspannung [V]	RDS on [mOhm]	Nennstrom [A]	Nennstrom [mA]	Nennstrom [25°]	Produkt Feature
G3R20MT17N	GeneSiC	Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	1700	20			84	-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Isolated Back-side	Anfragen
G2R1000MT33J	GeneSiC	Diskret	SiC Mosfets	Aktive Komponenten	TO-263-7	3300	1000			5	-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin	Anfragen
G3R20MT17-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		1700	20	75	75000		-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness	Anfragen

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